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Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package
Data Sheet
Features * Single voltage operation * High linearity and gain * Low noise figure Description Agilent Technologies's ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85C. All devices are 100% RF & DC tested.
Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin Connections and Package Marking
Pin 8 Pin 7 (Drain) Pin 6 Pin 5
* Excellent uniformity in product specifications
Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source)
Source (Thermal/RF Gnd)
* Small package size: 2.0 x 2.0 x 0.75 mm * Point MTTF > 300 years [2] * MSL-1 and lead-free * Tape-and-reel packaging option available
Bottom View
Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source)
Pin 8
3Px
Top View
Pin 7 (Drain) Pin 6 Pin 5
Specifications 2 GHz; 4V, 135 mA (Typ.) * 38 dBm output IP3 * 0.6 dB noise figure * 20 dB gain * 10.7 dB LFOM [4] * 24.5 dBm output power at 1 dB gain compression Applications * Front-end LNA Q1 and Q2 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure * Driver amplifier for WLAN, WLL/RLL and MMDS applications * General purpose discrete E-pHEMT for other high linearity applications
Note: Package marking provides orientation and identification: "3P" = Device Code "x" = Date code indicates the month of manufacture.
ATF-531P8 Absolute Maximum Ratings[1] Symbol
VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG ch_b
Parameter
Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance[4]
Units
V V V mA mA W dBm C C C/W
Absolute Maximum
7 -5 to 1 -5 to 1 300 20 1 +24 150 -65 to 150 63
Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25C. Derate 16 mW/C for TB > 87C. 4. Thermal resistance measured using 150C Liquid Crystal Measurement method. 5. Device can safely handle +24 dBm RF Input Power provided IGS is limited to 20mA. IGS at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6]
400 0.9 V 300 0.8 V
180 150 120 90 60 -3 Std +3 Std Cpk = 1.0 Stdev = 0.14
160 Cpk = 1.2 Stdev = 0.71 120
IDS (mA)
200
0.7 V
80
-3 Std
+3 Std
100
0.6 V
40 30
0.5 V 0 0 1 2 3 4 5 6 7 VDS (V)
0
0 0 0.3 0.6 NF (dB) 0.9 1.2 35 36
37
38 OIP3 (dBm)
39
40
41
Figure 1. Typical I-V Curves (Vgs = 0.1 per step).
Figure 2. NF Nominal = 0.6, USL = 1.0.
Figure 3. OIP3 LSL = 35.5, Nominal = 38.1.
300 250 200 150 100 50 0 18.5 -3 Std +3 Std Cpk = 2.0 Stdev = 0.21
240 Stdev = 0.12 200 160 120 80 40 0 24.2 -3 Std +3 Std
19.5 GAIN (dB)
20.5
21.5
24.4
24.6
24.8
25
25.2
P1dB (dBm)
Figure 4. Small Signal Gain LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
Figure 5. P1dB Nominal = 24.6.
Notes: 5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
ATF-531P8 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified. Symbol
Vgs Vth Idss Gm
Parameter and Test Condition
Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Vds = 4V, Ids = 135 mA Vds = 4V, Ids = 8 mA Vds = 4V, Vgs = 0V Vds = 4.5V, Gm = Idss/Vgs; ?Vgs = Vgs1 - Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V Vds = 0V, Vgs = -4V f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Offset BW = 5 MHz Offset BW = 10 MHz
Units
V V A mmho
Min.
-- -- -- --
Typ.
0.68 0.3 3.7 650
Max.
-- -- -- --
Igss NF G OIP3 P1dB PAE ACLR
Gate Leakage Current Noise Figure[1] Gain[1] Output 3rd Order Intercept Point[1,2] Output 1dB Compressed[1] Power Added Efficiency Adjacent Channel Leakage Power Ratio[1,3]
A dB dB dB dB dBm dBm dBm dBm % % dBc dBc
-10 -- -- 18.5 -- 35.5 -- -- -- -- -- -- --
-0.34 0.6 0.6 20 25 38 37 24.5 23 57 45 -68 -64
-- 1 -- 21.5 -- -- -- -- -- -- -- -- --
Notes: 1. Measurements obtained using production test board described in Figure 6. 2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Chan Integ Bw = 3.84 MHz
Input
50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss)
Input Matching Circuit _mag = 0.66 _ang = -165 (1.8 dB loss)
DUT
Output Matching Circuit _mag = 0.09 _ang = 118 (1.1 dB loss)
50 Ohm Transmission Line and Drain Bias T (0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
3
2.2 pF 3.3 pF 50 Ohm .02 22 nH 15 Ohm 100 pF 2.2 F 110 Ohm .03 110 Ohm .03 50 Ohm .02 4.7 pF
RF Input
DUT
12 nH
RF Output
Gate DC Supply
Drain DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions The device's optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent bias. The gamma load and source over frequency are shown in the table below: Freq (GHz)
0.9 2.0 3.9 5.8
Gamma Source Mag Ang
0.616 0.310 0.421 0.402 -37.1 34.5 167.5 -162.8
Gamma Load Mag Ang
0.249 0.285 0.437 0.418 130.0 168.3 -161.6 -134.1
OIP3 (dBm)
40.3 41.5 41.5 41.0
Gain (dB)
16.5 13.4 10.5 7.9
P1dB (dBm)
23.4 24.8 24.7 24.7
PAE (%)
43.2 51.9 42.8 36.6
4
ATF-531P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3
45 45 45
40
40
40
OIP3 (dBm)
OIP3 (dBm)
35
35
OIP3 (dBm)
3V 4V 5V
35
30
30
30
25
3V 4V 5V
25
25
3V 4V 5V
20 75 90 105 120 135 150 165 180 Ids (mA)
20 75 90 105 120 135 150 165 180 Ids (mA)
20 75 90 105 120 135 150 165 180 Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
17 16 15
17 16 15
12 10 8
GAIN (dB)
14 13 12 11 10 75 90 105 120 135 150 165 180 Ids (mA)
3V 4V 5V
GAIN (dB)
14 13 12 11 10 75 90 105 120 135 150 165 180 Ids (mA)
3V 4V 5V
GAIN (dB)
6 4 2 0
3V 4V 5V
75
90
105
120
135
150
165
180
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds at 900 MHz.
30
Figure 12. Small Signal Gain vs. Ids and Vds at 2 GHz.
30
Figure 13. Small Signal Gain vs. Ids and Vds at 3.9 GHz.
30
25
25
25
P1dB (dBM)
P1dB (dBM)
20
20
P1dB (dBM)
3V 4V 5V
20
15
3V 4V 5V
15
15
3V 4V 5V
10 75 90 105 120 135 150 165 180 Idq (mA)
10 75 90 105 120 135 150 165 180 Idq (mA)
10 75 90 105 120 135 150 165 180 Idq (mA)
Figure 14. P1dB vs. Idq and Vds at 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
5
ATF-531P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal OIP3
60 50 40
PAE (%) PAE (%)
60 50 40 30 20
3V 4V 5V
60 50 40
PAE (%)
3V 4V 5V
30 20 10 0
30 20 10 0
3V 4V 5V
10 0
75
90
105
120
135
150
165
180
75
90
105
120
135
150
165
180
75
90
105
120
135
150
165
180
Idq (mA)
Idq (mA)
Idq (mA)
Figure 17. PAE vs. Idq and Vds at 900 MHz.
Figure 18. PAE vs. Idq and Vds at 2 GHz.
Figure 19. PAE vs. Idq and Vds at 3.9 GHz.
45
12 10
30
SMALL SIGNAL GAIN (dB)
40
OIP3 (dBm)
25
P1dB (dBm)
8 6 4 2 0
3V 4V 5V
35
20
30
3V 4V 5V
25
15
3V 4V 5V
20 75 90 105 120 135 150 165 180 Ids (mA)
75
90
105
120
135
150
165
180
10
75
90
105
120
135
150
165
180
Ids (mA)
Idq (mA)
Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz.
Figure 21. Small Signal Gain vs. Ids and Vds at 5.8 GHz.
Figure 22. P1dB vs. Idq and Vds at 5.8 GHz.
60 50 40
PAE (%)
30 20 10 0
3V 4V 5V
75
90
105
120
135
150
165
180
Idq (mA)
Figure 23. PAE vs. Idq and Vds at 5.8 GHz.
Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.
6
ATF-531P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3, continued
45 20 30
40
15
25
OIP3 (dBm)
GAIN (dB)
35
10
P1dB (dBm)
-40C 25C 85C
20
30
-40C 25C 85C
25
5
15
-40C 25C 85C
20 0.5
1.5
2.5
3.5
4.5
5.5
0 0.5
1.5
2.5
3.5
4.5
5.5
10 0.5
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. OIP3 vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
80 70 60 50
Figure 25. Small Signal Gain vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
Figure 26. P1dB vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
PAE (%)
40 30 20 10 0 0.5 1.5 2.5 3.5 4.5
-40C 25C 85C
5.5
FREQUENCY (GHz)
Figure 27. PAE vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.
7
ATF-531P8 Typical Scattering Parameters at 25C, VDS = 4V, IDS = 180 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.626 0.704 0.761 0.794 0.815 0.824 0.834 0.840 0.845 0.848 0.854 0.857 0.853 0.853 0.855 0.858 0.864 0.871 0.869 0.880 0.883 0.884 0.874 0.874 0.877 0.884 0.894 0.896 0.898 0.918
Ang.
-59.4 -97.4 -119.4 -133.8 -142.5 -149.6 -155.1 -159.7 -163.3 -166.4 -177.7 175.9 174.4 168.9 161.6 150.8 140.7 131.7 123.5 115.2 106.8 95.7 85.1 74.1 63.3 57.9 46.8 43.3 31.9 20.8
dB
33.20 31.41 29.53 27.78 26.32 24.99 23.82 22.76 21.83 20.96 17.59 15.60 15.36 13.79 11.83 9.27 7.20 5.48 4.04 2.73 1.77 0.70 -0.34 -1.39 -2.52 -3.64 -4.81 -5.66 -7.25 -8.61
S21 Mag.
45.702 37.192 29.950 24.477 20.693 17.760 15.516 13.742 12.346 11.164 7.579 6.024 5.863 4.894 3.902 2.906 2.292 1.879 1.593 1.370 1.226 1.084 0.962 0.852 0.748 0.658 0.575 0.521 0.434 0.371
Ang.
154.5 135.8 123.5 114.8 108.9 103.9 99.9 96.6 93.6 91.0 80.6 73.9 72.6 66.5 57.9 44.6 31.6 19.4 7.5 -4.3 -16.1 -29.0 -41.6 -52.8 -64.5 -74.6 -85.4 -93.6 -102.6 -110.5
dB
-40.00 -35.92 -34.42 -33.56 -32.77 -32.77 -32.40 -32.40 -32.04 -32.04 -31.37 -30.75 -30.46 -29.90 -29.12 -27.74 -26.56 -25.35 -24.29 -23.35 -22.27 -21.41 -20.63 -19.91 -19.49 -19.02 -18.71 -18.49 -18.49 -18.94
S12 Mag.
0.010 0.016 0.019 0.021 0.023 0.023 0.024 0.024 0.025 0.025 0.027 0.029 0.030 0.032 0.035 0.041 0.047 0.054 0.061 0.068 0.077 0.085 0.093 0.101 0.106 0.112 0.116 0.119 0.119 0.113
Ang.
62.6 48.8 39.1 33.7 30.0 27.4 25.8 24.6 24.2 23.8 23.5 24.4 24.9 25.8 26.6 26.5 24.3 21.2 17.4 12.6 7.0 -0.8 -8.8 -16.6 -24.6 -31.9 -39.8 -47.8 -55.1 -62.6
S22 Mag. Ang.
0.410 0.384 0.370 0.360 0.355 0.351 0.349 0.349 0.349 0.347 0.344 0.344 0.335 0.339 0.337 0.356 0.378 0.402 0.427 0.449 0.465 0.489 0.505 0.544 0.596 0.638 0.662 0.699 0.748 0.718 -44.4 -79.2 -101.8 -117.6 -127.1 -135.5 -141.9 -146.9 -151.1 -154.3 -165.8 -171.2 -171.8 -176.8 177.0 168.5 160.6 152.4 144.6 136.1 127.4 116.6 106.0 97.2 85.9 74.7 65.9 56.1 47.7 39.3
MSG/MAG dB
36.60 33.66 31.98 30.67 29.54 28.88 28.11 27.58 26.94 26.50 24.48 23.17 22.91 21.85 19.60 16.23 14.19 12.69 11.18 10.39 9.70 8.70 7.20 6.30 5.46 4.95 4.29 4.06 2.82 1.75
Typical Noise Parameters at 25C, VDS = 4V, IDS = 180 mA
MSG/MAG & |S21|2 (dB)
Freq GHz
0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10
Fmin dB
0.50 0.59 0.60 0.72 0.81 0.90 1.01 1.10 1.13 1.34 1.48 1.58 1.68 1.89 2.15 2.34
opt Mag.
0.20 0.25 0.35 0.40 0.57 0.61 0.63 0.67 0.70 0.72 0.75 0.76 0.80 0.84 0.82 0.85
opt Ang.
166.00 169.00 171.00 173.00 -173.50 -167.70 -163.50 -158.20 -153.90 -142.70 -135.40 -133.30 -125.00 -116.10 -106.90 -95.10
Rn/50
0.041 0.044 0.036 0.039 0.029 0.033 0.041 0.054 0.068 0.139 0.229 0.278 0.470 0.860 1.170 2.010
Ga dB
28.26 24.27 24.15 21.14 20.07 18.73 16.91 15.86 15.12 13.08 12.04 11.82 10.69 9.97 8.96 8.09
40
30
MSG
20
MAG
10
S21
0
-10
0
5
10 FREQUENCY (GHz)
15
20
Figure 28. MSG/MAG & |S21|2 (dB) @ 4V, 180 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
8
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.812 0.820 0.834 0.842 0.846 0.849 0.853 0.853 0.855 0.857 0.857 0.857 0.853 0.852 0.853 0.857 0.861 0.866 0.867 0.875 0.877 0.884 0.889 0.872 0.878 0.886 0.902 0.902 0.895 0.932
Ang.
-56.4 -94.6 -117.3 -132.4 -141.4 -148.7 -154.4 -159.0 -162.7 -166.0 -177.3 176.2 174.7 169.2 161.7 150.8 140.9 131.6 123.5 115.1 106.9 95.6 85.3 73.9 63.6 57.6 47.2 43.7 32.1 20.6
dB
34.07 31.95 29.87 27.99 26.46 25.08 23.88 22.80 21.85 20.97 17.58 15.57 15.34 13.77 11.80 9.24 7.18 5.45 4.02 2.72 1.76 0.71 -0.34 -1.33 -2.48 -3.57 -4.66 -5.56 -6.99 -8.75
S21 Mag.
50.547 39.582 31.147 25.104 21.036 17.954 15.628 13.809 12.376 11.186 7.568 6.007 5.847 4.879 3.889 2.896 2.285 1.873 1.589 1.367 1.224 1.085 0.962 0.858 0.752 0.663 0.585 0.527 0.447 0.365
Ang.
151.8 132.2 120.2 111.8 106.3 101.6 97.9 94.8 92.0 89.6 79.7 73.3 72.0 66.0 57.6 44.6 31.8 19.7 7.9 -3.8 -15.3 -28.2 -41.0 -51.7 -64.0 -73.7 -84.8 -91.3 -101.9 -109.6
dB
-38.42 -34.89 -33.15 -32.40 -32.04 -31.70 -31.70 -31.37 -31.37 -31.37 -30.75 -30.17 -29.90 -29.37 -28.64 -27.54 -26.38 -25.19 -24.29 -23.22 -22.16 -21.31 -20.63 -19.91 -19.58 -19.02 -18.79 -18.49 -18.49 -18.94
S12 Mag.
0.012 0.018 0.022 0.024 0.025 0.026 0.026 0.027 0.027 0.027 0.029 0.031 0.032 0.034 0.037 0.042 0.048 0.055 0.061 0.069 0.078 0.086 0.093 0.101 0.105 0.112 0.115 0.119 0.119 0.113
Ang.
62.6 45.8 36.5 30.5 27.0 24.8 23.2 22.4 21.7 21.2 21.4 21.7 22.5 23.0 24.1 23.9 22.2 18.6 15.1 10.4 4.8 -2.6 -10.7 -18.3 -26.2 -33.3 -42.0 -49.2 -56.7 -63.9
S22 Mag. Ang.
0.449 0.425 0.397 0.385 0.379 0.375 0.372 0.372 0.371 0.369 0.366 0.366 0.347 0.351 0.358 0.375 0.396 0.417 0.440 0.459 0.474 0.496 0.511 0.548 0.600 0.640 0.663 0.698 0.746 0.716 -49.1 -85.0 -108.1 -123.7 -132.5 -140.4 -146.4 -151.0 -154.9 -157.9 -168.7 -174.2 -174.8 -179.7 174.2 165.7 157.8 149.6 141.8 133.4 124.8 114.1 103.7 95.1 84.0 73.1 64.4 54.7 46.5 38.2
MSG/MAG dB
36.25 33.42 31.51 30.20 29.25 28.39 27.79 27.09 26.61 26.17 24.17 22.87 22.62 21.57 20.22 16.28 14.11 12.50 11.10 10.16 9.40 8.69 7.93 6.24 5.55 5.05 4.93 4.37 2.93 2.36
Typical Noise Parameters, VDS = 4V, IDS = 135 mA
MSG/MAG & |S21|2 (dB)
Freq GHz
0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10
Fmin dB
0.18 0.26 0.35 0.40 0.51 0.56 0.60 0.73 0.83 1.03 1.15 1.20 1.34 1.57 1.78 1.83
opt Mag.
0.20 0.25 0.35 0.40 0.47 0.51 0.56 0.60 0.66 0.68 0.72 0.72 0.78 0.83 0.82 0.85
opt Ang.
166.00 169.00 171.00 173.00 177.20 -174.50 -169.30 -162.90 -157.60 -145.50 -137.10 -135.20 -126.70 -117.00 -107.90 -95.70
Rn/50
0.014 0.018 0.021 0.021 0.022 0.022 0.023 0.030 0.040 0.085 0.140 0.160 0.300 0.630 0.880 1.460
Ga dB
28.57 24.42 24.32 21.25 19.35 17.66 16.37 15.09 14.82 12.76 11.55 11.31 10.55 9.81 8.86 8.17
40
30
MSG
20
MAG
10
S21
0
-10
0
5
10 FREQUENCY (GHz)
15
20
Figure 29. MSG/MAG & |S21|2 (dB) @ 4V, 135 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
9
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.930 0.889 0.876 0.867 0.862 0.858 0.857 0.856 0.854 0.857 0.853 0.853 0.848 0.846 0.848 0.850 0.853 0.861 0.861 0.868 0.873 0.875 0.881 0.871 0.873 0.885 0.891 0.912 0.895 0.933
Ang.
-51.3 -88.3 -111.6 -127.3 -137.0 -144.7 -151.0 -156.0 -160.0 -163.5 -175.7 177.6 176.2 170.3 162.4 151.6 141.4 132.3 123.8 115.6 107.1 95.8 85.6 74.2 63.7 57.0 47.0 43.7 32.2 21.2
dB
33.70 31.65 29.58 27.71 26.18 24.81 23.62 22.54 21.59 20.72 17.33 15.33 15.09 13.52 11.55 8.98 6.93 5.22 3.78 2.50 1.51 0.50 -0.57 -1.56 -2.65 -3.80 -4.72 -5.76 -7.15 -8.66
S21 Mag.
48.399 38.230 30.121 24.294 20.379 17.405 15.165 13.404 12.005 10.859 7.351 5.839 5.681 4.742 3.780 2.813 2.220 1.824 1.546 1.334 1.190 1.059 0.937 0.836 0.737 0.646 0.581 0.515 0.439 0.369
Ang.
152.3 132.6 120.6 112.2 106.6 101.9 98.2 95.0 92.2 89.8 79.8 73.3 72.0 66.0 57.5 44.3 31.5 19.4 7.5 -4.3 -15.9 -28.8 -41.2 -52.5 -63.9 -74.0 -85.2 -93.5 -102.3 -110.5
dB
-37.08 -32.77 -31.37 -30.75 -30.46 -30.17 -29.90 -29.90 -29.63 -29.63 -29.12 -28.87 -28.64 -28.18 -27.74 -26.94 -25.85 -25.04 -24.01 -23.22 -22.16 -21.41 -20.63 -20.00 -19.66 -19.17 -18.79 -18.56 -18.49 -19.02
S12 Mag.
0.014 0.023 0.027 0.029 0.030 0.031 0.032 0.032 0.033 0.033 0.035 0.036 0.037 0.039 0.041 0.045 0.051 0.056 0.063 0.069 0.078 0.085 0.093 0.100 0.104 0.110 0.115 0.118 0.119 0.112
Ang.
63.6 46.8 36.1 29.5 25.9 23.1 21.1 19.9 18.3 18.2 16.3 16.5 16.7 17.0 17.0 16.7 15.4 12.9 9.8 5.5 0.4 -6.6 -13.8 -21.4 -28.8 -36.3 -43.7 -51.7 -58.5 -65.8
S22 Mag. Ang.
0.524 0.467 0.436 0.415 0.405 0.397 0.392 0.390 0.387 0.384 0.380 0.379 0.360 0.363 0.369 0.385 0.405 0.426 0.447 0.467 0.481 0.501 0.515 0.553 0.604 0.644 0.666 0.700 0.748 0.718 -45.7 -80.7 -103.2 -119.1 -128.4 -136.8 -143.2 -148.2 -152.3 -155.6 -167.2 -173.2 -173.8 -179.0 174.6 165.7 157.5 149.2 141.3 132.8 124.1 113.3 102.9 94.5 83.4 72.5 63.7 54.2 46.0 37.8
MSG/MAG dB
35.39 32.21 30.48 29.23 28.32 27.49 26.76 26.22 25.61 25.17 23.22 22.10 21.86 20.85 19.65 16.29 13.90 12.31 10.85 9.85 9.15 8.19 7.40 6.12 5.28 4.89 4.38 5.43 2.90 2.74
Typical Noise Parameters, VDS = 4V, IDS = 75 mA
MSG/MAG & |S21|2 (dB)
Freq GHz
0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10
Fmin dB
0.15 0.20 0.22 0.30 0.36 0.44 0.50 0.55 0.63 0.80 0.90 0.91 1.14 1.24 1.49 1.61
opt Mag.
0.10 0.15 0.20 0.30 0.35 0.43 0.47 0.58 0.60 0.67 0.72 0.72 0.71 0.74 0.74 0.76
opt Ang.
130.00 135.00 143.00 148.00 154.10 168.70 179.30 -170.80 -164.80 -150.90 -140.80 -139.50 -129.10 -119.90 -109.70 -97.30
Rn/50
0.016 0.019 0.019 0.022 0.024 0.022 0.022 0.019 0.024 0.050 0.095 0.100 0.180 0.285 0.460 0.720
Ga dB
27.97 23.50 23.02 20.07 17.85 16.35 15.29 14.11 14.01 11.92 11.00 10.56 9.80 9.31 8.41 7.73
40
30
MSG
20
MAG
10
S21
0
-10
0
5
10 FREQUENCY (GHz)
15
20
Figure 30. MSG/MAG & |S21|2 (dB) @ 4V, 75 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
10
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.805 0.815 0.831 0.839 0.844 0.846 0.850 0.852 0.855 0.854 0.855 0.857 0.851 0.851 0.852 0.857 0.859 0.870 0.867 0.877 0.881 0.885 0.892 0.875 0.883 0.886 0.913 0.908 0.891 0.928
Ang.
-56.0 -94.0 -116.9 -131.7 -140.9 -148.3 -154.0 -158.7 -162.5 -165.6 -177.1 176.3 174.9 169.4 161.8 151.1 141.0 131.8 123.6 115.6 106.7 95.6 85.2 74.2 63.8 57.9 47.4 43.1 32.2 20.6
dB
34.11 32.03 29.97 28.10 26.58 25.20 24.00 22.93 21.98 21.10 17.71 15.71 15.46 13.89 11.92 9.35 7.30 5.57 4.11 2.80 1.82 0.75 -0.30 -1.33 -2.49 -3.58 -4.78 -5.81 -6.99 -8.64
S21 Mag.
50.734 39.967 31.517 25.418 21.322 18.207 15.852 14.014 12.559 11.351 7.681 6.099 5.931 4.946 3.943 2.935 2.318 1.899 1.605 1.381 1.233 1.090 0.966 0.858 0.751 0.662 0.577 0.512 0.447 0.370
Ang.
152.1 132.6 120.5 112.1 106.4 101.8 98.0 94.8 92.0 89.6 79.5 73.0 71.7 65.6 57.1 43.9 30.9 18.5 6.5 -5.2 -17.0 -30.1 -42.9 -54.3 -65.9 -76.4 -86.8 -94.4 -105.1 -112.1
dB
-39.17 -34.89 -33.56 -32.77 -32.40 -32.04 -31.70 -31.70 -31.70 -31.37 -31.06 -30.46 -30.17 -29.63 -29.12 -27.74 -26.56 -25.51 -24.44 -23.48 -22.38 -21.41 -20.72 -20.00 -19.66 -19.09 -18.71 -18.56 -18.49 -18.86
S12 Mag.
0.011 0.018 0.021 0.023 0.024 0.025 0.026 0.026 0.026 0.027 0.028 0.030 0.031 0.033 0.035 0.041 0.047 0.053 0.060 0.067 0.076 0.085 0.092 0.100 0.104 0.111 0.116 0.118 0.119 0.114
Ang.
62.6 46.6 36.3 30.7 27.2 24.9 23.3 22.3 21.6 20.9 21.1 22.3 22.3 23.3 24.3 24.4 22.8 19.7 16.3 11.8 6.1 -1.3 -9.1 -17.0 -24.8 -31.8 -40.3 -47.8 -54.9 -62.6
S22 Mag. Ang.
0.468 0.419 0.387 0.364 0.354 0.346 0.342 0.339 0.337 0.335 0.331 0.331 0.336 0.315 0.323 0.343 0.367 0.391 0.417 0.440 0.458 0.482 0.500 0.540 0.593 0.636 0.660 0.699 0.747 0.717 -45.2 -79.7 -102.0 -117.9 -127.0 -135.4 -141.6 -146.5 -150.5 -153.9 -165.0 -170.4 -170.9 -175.8 178.2 169.9 162.1 154.0 146.2 137.7 129.1 118.1 107.5 98.6 87.1 75.8 66.8 57.0 48.4 39.9
MSG/MAG dB
36.64 33.46 31.76 30.43 29.49 28.62 27.85 27.32 26.84 26.24 24.38 23.08 22.82 21.76 19.82 16.43 14.19 12.82 11.24 10.41 9.75 8.94 8.31 6.52 5.87 5.23 6.01 4.78 2.98 2.41
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
MSG/MAG & |S21|2 (dB)
Freq GHz
0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10
Fmin dB
0.45 0.48 0.50 0.55 0.65 0.70 0.77 0.84 0.90 1.06 1.20 1.19 1.40 1.52 1.75 1.88
opt Mag.
0.20 0.32 0.35 0.40 0.46 0.49 0.55 0.58 0.62 0.66 0.69 0.69 0.77 0.81 0.82 0.85
opt Ang.
154.00 160.00 166.00 170.00 177.40 -175.10 -168.90 -162.60 -158.20 -145.80 -137.30 -135.40 -126.50 -117.90 -107.50 -95.60
Rn/50
0.037 0.032 0.030 0.030 0.030 0.032 0.031 0.037 0.043 0.085 0.140 0.150 0.320 0.550 0.890 1.530
Ga dB
28.85 25.13 24.43 21.26 19.38 17.90 16.33 15.23 14.60 12.66 11.60 11.38 10.55 9.84 9.05 8.29
40
30
MSG
20
MAG
10
S21
0
-10
0
5
10 FREQUENCY (GHz)
15
2
20
Figure 31. MSG/MAG & |S21| (dB) @ 5V, 135 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
11
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.823 0.826 0.842 0.846 0.851 0.850 0.855 0.856 0.859 0.857 0.857 0.858 0.855 0.855 0.854 0.858 0.860 0.868 0.866 0.877 0.876 0.880 0.883 0.874 0.878 0.884 0.906 0.907 0.893 0.925
Ang.
-57.1 -95.6 -118.2 -133.1 -142.0 -149.2 -154.9 -159.5 -163.2 -166.3 -177.7 175.8 174.4 168.8 161.4 150.7 140.4 131.4 123.2 114.8 106.3 95.1 84.7 73.6 62.9 56.9 46.7 42.9 32.2 20.7
dB
33.96 31.82 29.66 27.75 26.21 24.83 23.62 22.55 21.59 20.71 17.32 15.31 15.08 13.51 11.54 8.98 6.92 5.21 3.79 2.52 1.57 0.56 -0.46 -1.51 -2.56 -3.54 -4.70 -5.61 -6.80 -8.38
S21 Mag.
49.888 38.989 30.415 24.416 20.452 17.443 15.178 13.405 12.012 10.853 7.342 5.828 5.676 4.738 3.774 2.812 2.219 1.821 1.547 1.337 1.198 1.066 0.948 0.840 0.745 0.665 0.582 0.524 0.457 0.381
Ang.
151.3 131.6 119.6 111.4 105.9 101.4 97.7 94.7 92.0 89.6 79.9 73.6 72.3 66.4 58.2 45.3 32.8 21.0 9.4 -2.0 -13.7 -26.0 -38.2 -49.6 -61.1 -71.0 -80.8 -88.0 -99.8 -107.2
dB
-37.72 -33.98 -32.77 -32.04 -31.70 -31.37 -31.37 -31.06 -31.06 -30.75 -30.46 -29.90 -29.37 -29.12 -28.40 -27.13 -26.02 -24.88 -23.88 -22.85 -21.83 -21.11 -20.35 -19.83 -19.41 -18.94 -18.71 -18.49 -18.42 -18.86
S12 Mag.
0.013 0.020 0.023 0.025 0.026 0.027 0.027 0.028 0.028 0.029 0.030 0.032 0.034 0.035 0.038 0.044 0.050 0.057 0.064 0.072 0.081 0.088 0.096 0.102 0.107 0.113 0.116 0.119 0.120 0.114
Ang.
62.6 45.7 36.0 30.1 26.8 24.4 22.9 22.1 21.4 21.1 21.0 21.6 22.1 22.6 22.8 22.7 20.7 17.2 13.4 8.5 2.6 -5.0 -12.9 -20.7 -28.5 -35.9 -43.9 -51.4 -58.7 -66.3
S22 Mag. Ang.
0.427 0.418 0.421 0.420 0.419 0.419 0.419 0.420 0.421 0.419 0.418 0.418 0.410 0.403 0.409 0.423 0.440 0.457 0.475 0.490 0.502 0.519 0.530 0.566 0.613 0.652 0.670 0.704 0.747 0.717 -55.1 -92.8 -115.9 -130.7 -139.0 -146.4 -151.9 -156.1 -159.7 -162.6 -172.9 -178.2 -179.1 176.0 169.8 161.0 152.8 144.4 136.6 128.0 119.3 108.7 98.4 90.7 79.7 69.3 60.8 51.6 43.7 35.8
MSG/MAG dB
35.84 32.90 31.21 29.90 28.96 28.10 27.50 26.80 26.32 25.73 23.89 22.60 22.23 21.32 19.97 16.15 13.82 12.31 10.81 10.00 9.09 8.20 7.31 6.06 5.32 4.87 4.76 4.29 2.90 2.20
Typical Noise Parameters, VDS = 3V, IDS = 135 mA
MSG/MAG & |S21|2 (dB)
Freq GHz
0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10
Fmin dB
0.25 0.30 0.30 0.36 0.45 0.52 0.66 0.70 0.87 1.02 1.13 1.24 1.34 1.58 1.78 1.88
opt Mag.
0.20 0.25 0.35 0.40 0.46 0.52 0.56 0.62 0.65 0.67 0.71 0.73 0.82 0.83 0.81 0.83
opt Ang.
166.00 169.00 171.00 173.00 176.80 -174.70 -169.80 -162.80 -157.90 -145.70 -136.80 -135.10 -126.20 -116.90 -107.50 -95.40
Rn/50
0.020 0.022 0.018 0.019 0.020 0.021 0.025 0.028 0.042 0.082 0.140 0.175 0.380 0.645 0.870 1.350
Ga dB
28.47 24.36 24.24 21.17 19.30 18.08 16.26 15.33 14.62 12.52 11.53 11.40 10.57 9.67 8.59 7.76
40
30
MSG
20
MAG
10
S21
0
-10
0
5
10 FREQUENCY (GHz)
15
20
Figure 32. MSG/MAG & |S21|2 (dB) @ 3V, 135 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
12
Device Models Refer to Agilent's Web Site www.agilent.com/view/rf
Ordering Information Part Number
ATF-531P8-TR1 ATF-531P8-TR2 ATF-531P8-BLK
No. of Devices
3000 10000 100
Container
7" Reel 13"Reel antistatic bag
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1 P pin1
D pin1 1 2 8
E1 R
e
3 4
3PX
7 E 6 5
L
b
Bottom View
Top View
A
A1 A2
A
Side View
End View
DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45
DIMENSIONS ARE IN MILLIMETERS
13
PCB Land Pattern and Stencil Design
2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 0.20 (7.87) Solder mask RF transmission line
+
2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.32 (12.79) 0.50 (19.68) 1.54 (60.61) 0.25 (9.74)
0.25 (9.84) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83)
0.60 (23.62) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65)
0.72 (28.35)
0.63 (24.80)
PCB Land Pattern (top view)
Stencil Layout (top view)
Device Orientation
REEL 4 mm
8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE
3PX
3PX
3PX
3PX
14
Tape Dimensions
D P P0 P2 E
F W + +
D1
t1 K0 10 Max A0 B0 10 Max
Tt
DESCRIPTION
CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL
A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm)
2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 1.50 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 8.00 - 0.10 0.254 0.02 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (inches)
0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 0.060 0.004 0.157 0.004 0.069 0.004 0.315 0.012 0.315 0.004 0.010 0.0008 0.205 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002
15
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788 6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright (c) 2002 Agilent Technologies, Inc. Obsoletes 5988-8407EN (12/02) July 31, 2003 5988-9990EN

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